发明名称 |
SCANNING ELECTRON MICROSCOPE |
摘要 |
<p>Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.</p> |
申请公布号 |
WO2011089913(A1) |
申请公布日期 |
2011.07.28 |
申请号 |
WO2011JP00301 |
申请日期 |
2011.01.21 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION;OMORI, SEIKO;TANAKA, JUNICHI;NAKAYAMA, YOSHINORI;HITOMI, KEIICHIRO |
发明人 |
OMORI, SEIKO;TANAKA, JUNICHI;NAKAYAMA, YOSHINORI;HITOMI, KEIICHIRO |
分类号 |
H01J37/22;G01B15/04;H01J37/28 |
主分类号 |
H01J37/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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