| 摘要 |
<p>PURPOSE: A method for manufacturing a diode-type phase change memory device is provided to minimize electrical disturbance between cells, thereby increasing memory cell efficiency. CONSTITUTION: An interlayer insulating film(200) is formed on an active area(150) of a substrate(100). The interlayer insulating film is partially etched using light exposing and etching processes to form a hole which has a cylinder shape. A first insulating film is deposited on the interlayer insulating film and the hole. The outside of the first insulating film is etched to form a contact hole(400) which has a cylinder shape.</p> |
