| 摘要 |
<p>An electro-optical demodulator based on buried photodiode comprising, on an epitaxial layer (22), a first pair of n+ junctions defining a pair of collectors (23, 23') placed on opposite edges of said epitaxial layer (22), a silicon oxide layer (24) formed on said epitaxial layer (22) and between said collectors (23, 23'), a pair of polysilicon gates (25.1, 25.2), formed on said silicon oxide layer (24); said gates extending to a middle line (r') of the demodulator, without touching each other; an n-type buried layer (Z21) and a p-type surface implantation (Z22) in the middle part of the device in the epitaxial layer (22) and under said oxide layer (24). A potential difference applied between the gate contacts G21 and G22 creates a lateral electric field which permits the quick transfer of the photo-generated electrons towards one of the two collectors (23, 23').</p> |
