发明名称
摘要 <p>&lt;P&gt;PROBLEM TO BE SOLVED: To provide a method for modifying a defective part of a photomask having gradation by which a minute defective part can be modified with an existing device for modifying a defective part of a photomask and by which the remaining film amount of resist on a transfer substrate can be controlled, with respect to a method for modifying a defective part of a transluecent film of a photomask having gradation, and to provide a photomask. Ž&lt;P&gt;SOLUTION: In the method for modifying a defective part of a translucent area of a photomask having a desired pattern on a transparent substrate, wherein a film forming the pattern consists of a light blocking film which does not transmit exposure light and a translucent film which transmits exposure light at a desired transmittance, and having gradation in which there are mixed a light blocking area where at least the light blocking film exists, the translucent area where the translucent film exists and a transmission area where neither the light blocking film nor the translucent film exists, a light blocking film pattern for modification or a translucent film pattern for modification not over the resolution limit of an exposure machine is formed on the defective part of the translucent area so that the amount of light passing through a modified part is made equal to the amount of light passing through the defect-free normal translucent area. Ž&lt;P&gt;COPYRIGHT: (C)2007,JPO&INPIT Ž</p>
申请公布号 JP4736818(B2) 申请公布日期 2011.07.27
申请号 JP20060011800 申请日期 2006.01.20
申请人 发明人
分类号 G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/72
代理机构 代理人
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