发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to form an uneven part on the interface between a reflective electrode and a semiconductor layer, thereby enhancing current dispersing effects. CONSTITUTION: A light emitting structure is formed on a conductive substrate(107). The light emitting structure comprises a first conductive semiconductor layer(103), an active layer(102), and a second conductive semiconductor layer(101). A first conductive contact layer(104) is arranged between the conductive substrate and the first conductive semiconductor layer. An insulator(106) is interposed between the first conductive contact layer and a conductive substrate. A conductive via is expanded from the conductive substrate.
申请公布号 KR20110085727(A) 申请公布日期 2011.07.27
申请号 KR20100005660 申请日期 2010.01.21
申请人 SAMSUNG LED CO., LTD. 发明人 LEE, SANG BUM;YANG, JONG IN;SONG, SANG YEOB;LEE, SI HYUK;KIM, TAE HYUNG
分类号 H01L33/38 主分类号 H01L33/38
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