发明名称 Thermopile infrared sensor in monolithic silicium microstructure
摘要 The sensor has a thermopile-sensor structure comprising thermal elements e.g. thermopile or bolometer, that are arranged on connection rods (6), where the rods connect hot contacts (9) on an absorber layer (5) with cold contacts (8) of the thermal elements. A membrane (3) is suspended over the connection rods, and has slots on both sides of the thermal elements. The slots separate the connection rods from a central area (4) and a heat-conducting frame-shaped supporting body (2), where the central area is covered by the absorber layer. The sensor structure is made from poly-silicon.
申请公布号 EP2348294(A1) 申请公布日期 2011.07.27
申请号 EP20100194288 申请日期 2010.12.09
申请人 HEIMANN SENSOR GMBH 发明人 FORG, BODO;HERRMANN, FRANK;LENEKE, WILHELM;SCHIEFERDECKER, JOERG;SIMON, MARION;STORCK, KARLHEINZ;SCHULZE, MISCHA
分类号 G01J5/02;G01J5/04;G01J5/08;G01J5/10;G01J5/12 主分类号 G01J5/02
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