METHOD FOR PRODUCING SEMICONDUCTOR WAFERS COMPOSED OF SILICON HAVING A DIAMETER OF 450 OF AT LEAST 450 MM, AND SEMICONDUCTOR WAFER COMPOSED OF SILICON HAVING A DIAMETER OF 450 MM

摘要

PURPOSE: A method for producing a semiconductor wafer whose diameter is at least 450mm and the semiconductor wafer which is made of silicon whose diameter is 450mm are provided to have a proper defect feature, thereby using the semiconductor wafer as a substrate. CONSTITUTION: A single crystal object(1) increases a melted material(2) of a crucible(3). The single crystal object surrounds a cooling device(6) and a heat shielding unit(7). The heat shielding unit has an end which has a cone shape. A resistive heater(4) is arranged around the crucible. A magnetic field generating device(5) applies a horizontal magnetic field to the melted material.