NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER,申请号KR20117011380-传众专利搜索

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发明名称	NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER
摘要
申请公布号	KR20110086090(A)	申请公布日期	2011.07.27
申请号	KR20117011380	申请日期	2009.10.21
申请人	APPLIED MATERIALS, INC.	发明人	BALSEANU MIHAELA;ZUBKOV VLADIMIR;XIA LI QUN;NOORI ATIF;ARGHAVANI REZA;WITTY DEREK R.;AL BAYATI AMIR
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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