PURPOSE: A method of forming an anti-fingerprint film is provided to ensure sufficient contact angle of a film since chemical bonding of a precursor is appropriately disassembled through control of plasma density and thus the surface of a SiOx(Silicon Dioxide) film becomes hydrophobic. CONSTITUTION: A method of forming an anti-fingerprint film is as follows. A substrate(310) is prepared for the chamber of a plasma substrate treating device. Injection gas and a precursors are supplied to the chamber. Power is supplied to one of the top and bottom electrodes of the plasma substrate treating device and plasma is created. An anti-fingerprint film(330) is formed on the substrate by the plasma.
申请公布号
KR20110085588(A)
申请公布日期
2011.07.27
申请号
KR20100005455
申请日期
2010.01.21
申请人
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION
发明人
HAN, JEON GEON;CHOI, IN SIK;CHOI, YOON SEOK;JIN, SU BONG