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发明名称
METHOD OF FABRICATING AN OXIDE LAYER ON A SILICON CARBIDE LAYER UTILIZING N2O
摘要
申请公布号
EP1323185(B1)
申请公布日期
2011.07.27
申请号
EP20010977868
申请日期
2001.10.01
申请人
CREE, INC.
发明人
LIPKIN, LORI;DAS, MRINAL, KANTI;PALMOUR, JOHN, W.
分类号
H01L21/28;H01L21/316;H01L21/04;H01L29/24;H01L29/78
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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