| 摘要 |
The invention relates to a method of preparation of a carrier substrate in a fabrication process of homo- or heteroepitaxial films or layers, comprising the steps of providing a crystalline or mono-crystalline base substrate. It is the object of the present invention to provide a process of preparation of a carrier substrate which further reduces the influence of the substrate while being at the same time economically viable. The object is solved by providing an epitaxial stiffening layer on a surface of the base substrate and isolating the stiffening layer, in particular together with the sub-layer of the base substrate, from the remainder of the base substrate, whereby the isolated material creates the carrier substrate. <IMAGE> |
