| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a light-emitting diode capable of forming an electrode, having superior electrical characteristics and electrical durability at a low cost, and capable of obtaining the light-emitting diode having high performance and long lifetime at low cost. <P>SOLUTION: In the GaN light-emitting diode, Ag films 17, having a specified shape are formed on p-type GaN layers 15, and Ni films 18, are formed only on the top faces and side faces of the Ag films 17 through electroless plating method, and p-side electrodes 19 are formed by the Ag films 17 and the Ni films 18. The Ni films may be formed on the Ag films 17, in the same shapes as those of the Ag films and Pd catalyst layers are formed on the surfaces of the Ag films 17 prior to forming the Ni films 18. <P>COPYRIGHT: (C)2007,JPO&INPIT |
