发明名称 MANUFACTURING METHOD OF ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTORS
摘要 <p>PURPOSE: A method for manufacturing an organic light emitting transistor is provided to deposit an electron transport layer and a hole transport layer by a specific compound, thereby increasing electric field mobility in the air. CONSTITUTION: A gate electrode(201) is formed in the lower part of a substrate(200). The substrate is inserted into a cluster beam deposition chamber. An evaporated compound is supplied into the cluster beam deposition chamber. A hole transport layer(203) is deposited on an electron transport layer. A source electrode(204) and a drain electrode(205) are formed on the hole transport layer.</p>
申请公布号 KR20110085833(A) 申请公布日期 2011.07.27
申请号 KR20100060154 申请日期 2010.06.24
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 CHOI, JONG HO
分类号 H01L51/40;H01L51/10;H01L51/52 主分类号 H01L51/40
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