METHOD FOR MANUFACTURING NOR-TYPE NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a nor-type flash memory device is provided to diffuse implanted impurities through a heating process, thereby forming an impurity area under floating poly silicon after floating poly silicon is formed. CONSTITUTION: A first conductive film is formed on a substrate. First hard mask patterns(132) are in parallel in y direction on the first conductive film. The first conductive film is selectively eliminated to form first conductive patterns. The surface of a substrate is exposed between first conductive patterns by first trenches. A photo resist pattern opens one first trench. An impurity extension area(152) is expanded in x direction of the substrate. First hard mask patterns are selectively eliminated by an etching mask to form second trenches(164).