发明名称 |
Method of preparing quantum dot-inorganic matrix composites |
摘要 |
A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.
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申请公布号 |
US7985607(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20090318874 |
申请日期 |
2009.01.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY ACADEMY-INDUSTRY FOUNDATION |
发明人 |
KIM SUNGJEE;LEE JINSIK;OH SONGJOO |
分类号 |
H01L21/00;B05D7/00;B82B1/00;B82B3/00;B82Y20/00;B82Y30/00;B82Y40/00;C01B19/04;C03C17/02;C09K11/00;H01L33/06;H01L33/28;H01L33/30;H01L33/32;H01L33/44;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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