发明名称 Method for manufacturing a semiconductor device
摘要 A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.
申请公布号 US7985663(B2) 申请公布日期 2011.07.26
申请号 US20090471923 申请日期 2009.05.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO TAKAO;HOMMA SOICHI;SHIMA MASAYA
分类号 H01L21/00;H01L23/495 主分类号 H01L21/00
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