发明名称 Patterning 3D features in a substrate
摘要 Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.
申请公布号 US7985689(B2) 申请公布日期 2011.07.26
申请号 US20070763199 申请日期 2007.06.14
申请人 APPLIED MATRIALS, INC. 发明人 PEROZZIELLO ERIC;KROPEWNICKI THOMAS JOSEPH;WOJCIK GREGORY L.;GOEBEL ANDREAS;BJORKMAN CLAES
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
代理机构 代理人
主权项
地址