| 摘要 |
PURPOSE: A semiconductor die singulation method is provided to completely penetrate a semiconductor wafer to etch openings, thereby increasing the number of semiconductor dies on a wafer. CONSTITUTION: A semiconductor substrate includes a plurality of semiconductor dies(42,44,46) which is separated by parts of a semiconductor wafer where singulation lines are formed. A singulation mask layer is placed on the semiconductor dies. An opening penetrates the singulation mask layer on which singulation lines(43,45) are formed. A first opening penetrates layers under the opening. A part of the surface of the semiconductor substrate is exposed. A first opening is etched to completely penetrate the semiconductor wafer. The opening in the singulation mask layer is used as a mask. |
