| 摘要 |
A memory cell array is formed by arranging memory cells at intersections of plural first wirings and plural second wirings, and a rectifying element and a variable resistive element are connected in series in the memory cell. The variable resistive element has at least a first resistance value and a second resistance value that is higher than the first resistance value. The control circuit selectively drives the first wirings and the second wirings. The control circuit can perform a short-circuit failure countermeasure program operation. In the short-circuit failure countermeasure program operation, the variable resistive element of the memory cell whose rectifying element is in a short-circuit failure state is programmed from the first resistance value to the second resistance value.
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