发明名称 |
Method of forming a nonvolatile memory device using semiconductor nanoparticles |
摘要 |
A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
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申请公布号 |
US7985686(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20060373127 |
申请日期 |
2006.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BLACK CHARLES T.;GUARINI KATHRYN WILDER |
分类号 |
H01L21/311;H01L21/28;H01L21/8247;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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