发明名称 METHOD OF FORMING A SEMICONDUCTOR DIE
摘要 PURPOSE: A method for forming a semiconductor die is provided to form a short mutual connection unit, thereby minimizing parasitic resistance and inductance in the connection unit. CONSTITUTION: A semiconductor wafer(30) has an upper surface and a bottom surface. A plurality of semiconductor dies is formed on the semiconductor wafer. An irregular shape is singulated using a singulation line(31) which is expanded in an axial direction. A singulation area is formed as a semiconductor wafer area between the semiconductor dies. The semiconductor dies are simultaneously singulated by dry-etching.
申请公布号 KR20110084835(A) 申请公布日期 2011.07.26
申请号 KR20110004371 申请日期 2011.01.17
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. 发明人 GRIVNA GORDON M.;SEDDON MICHAEL J.
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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