发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DIE |
摘要 |
PURPOSE: A method for forming a semiconductor die is provided to form a short mutual connection unit, thereby minimizing parasitic resistance and inductance in the connection unit. CONSTITUTION: A semiconductor wafer(30) has an upper surface and a bottom surface. A plurality of semiconductor dies is formed on the semiconductor wafer. An irregular shape is singulated using a singulation line(31) which is expanded in an axial direction. A singulation area is formed as a semiconductor wafer area between the semiconductor dies. The semiconductor dies are simultaneously singulated by dry-etching. |
申请公布号 |
KR20110084835(A) |
申请公布日期 |
2011.07.26 |
申请号 |
KR20110004371 |
申请日期 |
2011.01.17 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
GRIVNA GORDON M.;SEDDON MICHAEL J. |
分类号 |
H01L21/301;H01L21/78 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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