发明名称 |
Method of fabricating semiconductor device having differential gate dielectric layer and related device |
摘要 |
A semiconductor device and method of fabricating a semiconductor device are provided. The method includes forming a gate trench in a semiconductor substrate to define source/drain regions. The source/drain regions are separated from each other by the gate trench, and the semiconductor substrate is exposed through the gate trench. The semiconductor substrate has impurities of a first conductivity type. The source/drain regions have impurities of a second conductivity type different from the first conductivity type. The concentration of the second conductivity type impurities increases as the impurities approach the surfaces of the source/drain regions. A differential gate dielectric layer is formed along the surfaces of the source/drain regions and the semiconductor substrate exposed through the gate trench. A gate electrode filling the gate trench is formed. The differential gate dielectric layer has a first thickness between the gate electrode and the semiconductor substrate and has a second thickness greater than the first thickness between the gate electrode and the source/drain regions.
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申请公布号 |
US7985651(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20080318384 |
申请日期 |
2008.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JOO-YOUNG;LEE JIN-WOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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