发明名称 |
Light-emitting semiconductor device |
摘要 |
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
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申请公布号 |
US7985964(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20080313123 |
申请日期 |
2008.11.17 |
申请人 |
MEIJO UNIVERSITY |
发明人 |
KAMIYAMA SATOSHI;AMANO HIROSHI;AKASAKI ISAMU;IWAYA MOTOAKI |
分类号 |
H01L29/06;H01L31/00;H01L33/04;H01L33/32;H01L33/40 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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