METHOD FOR PRODUCING A SEMICONDUCTOR, AND SEMICONDUCTOR AND ELECTRIC ELEMENT

摘要

The production of a nanoparticulate semiconductor from doped nanoparticles by spark plasma sintering is proposed, thus providing semiconductors having a thickness of more than 90% of the theoretically possible thickness of the solid material. Such semiconductors are used in particular for thermoelectric, photovoltaic or other electronic elements. In particular, also semiconductors having differently doped layers can be produced by layering differently doped particles and sintering the same.