发明名称 PHOTOVOLTAIC DEVICE COMPRISING COMPOSITIONALLY GRADED INTRINSIC PHOTOACTIVE LAYER
摘要 <p>Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of Inl-xAxN,; wherein: i. 0<x<1 ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photo active layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at 600degC or less using neutral nitrogen atoms of from about 1.0 eV to about 5.0 eV, and grown at a rate of from about 5 nm/min to about 100 nm/min.</p>
申请公布号 WO2011087753(A1) 申请公布日期 2011.07.21
申请号 WO2010US61263 申请日期 2010.12.20
申请人 LOS ALAMOS NATIONAL SECURITY, LLC;HOFFBAUER, MARK A.;WILLIAMSON, TODD L. 发明人 HOFFBAUER, MARK A.;WILLIAMSON, TODD L.
分类号 H01L21/20 主分类号 H01L21/20
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