发明名称 ERASE VERIFICATION METHOD OF FLASH MEMORY APPARATUS
摘要 A suitable erase verification (ERSV) method of a flash memory apparatus is provided, which is different from the conventional ERSV method. That is, by managing the ERSV operation on the flash memory after at least once of erase operation, a flash memory controller in the flash memory apparatus selectively assigns at least one of de-selected sectors instead of all of the de-selected sectors to perform the ERSV. Therefore, by managing the ERSV operation on the flash memory, the time for the ERSV operation thereon is reduced.
申请公布号 US2011176369(A1) 申请公布日期 2011.07.21
申请号 US20100689235 申请日期 2010.01.19
申请人 ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 CHEN CHUNG-ZEN
分类号 G11C16/06;G11C16/16 主分类号 G11C16/06
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