DRIVE CURRENT ENHANCEMENT IN TRI-GATE MOSFETS BY INTRODUCTION OF COMPRESSIVE METAL GATE STRESS USING ION IMPLANTATION
摘要
<p>A semiconductor device comprises a fin and a metal gate film. The fin is formed on a surface of a semiconductor material. The metal gate film formed on the fin and comprises ions implanted in the metal gate film to form a compressive stress within the metal gate. In one exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and an orientation of the fin is along a <100> direction with respect to the crystalline lattice of the semiconductor. In another exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and the orientation of the fin is along a <110> direction with respect to the crystalline lattice of the semiconductor. The fin comprises an out-of-plane compression that is generated by the compressive stress within the metal gate film.</p>
申请公布号
WO2011087566(A1)
申请公布日期
2011.07.21
申请号
WO2010US57174
申请日期
2010.11.18
申请人
INTEL CORPORATION;MEHANDRU, RISHABH;WEBER, CORY, E.;ASHUTOSH, ASHUTOSH;HWANG, JACK
发明人
MEHANDRU, RISHABH;WEBER, CORY, E.;ASHUTOSH, ASHUTOSH;HWANG, JACK