| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin MOS field effect transistor including a magnetic body forming an antiferromagnetic coupling with a full Heusler alloy of high spin polarizability, and using a magnetoresistive effect element with a high TMR ratio. SOLUTION: The spin MOS field effect transistor includes, at least one of a source and a drain, a structure including a full Heusler alloy layer 13 formed on a semiconductor substrate 10, a ferromagnetic layer 14 formed on the full Heusler alloy layer 13 and having a face-centered cubic lattice structure, a nonmagnetic layer 15 formed on the ferromagnetic layer 14, and a ferromagnetic layer 16 formed on the nonmagnetic layer 15. The antiferromagnetic coupling is formed between the ferromagnetic layer 14 and ferromagnetic layer 16 formed with the nonmagnetic layer 15 interposed. COPYRIGHT: (C)2011,JPO&INPIT |
