| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor which is unlikely to break even when applied with a high voltage. SOLUTION: The field-effect transistor includes first and second transistor portions 11 and 12 which are substantially identical to each other. The first transistor portion 11 includes a group-III nitride semiconductor layer structure including a heterojunction, a source electrode 5 and a drain electrode 7 disposed at an interval on the group-III nitride semiconductor layer structure, a gate electrode 6 having a field plate 91, and an insulator layer 8 disposed to cover the drain electrode 7. The field plate 91 extends in an eaves shape to cover the drain electrode 7. The second transistor portion 12 is disposed substantially plane-symmetrically with the first transistor portion 11. The group-III nitride semiconductor structure, insulator layer 8, and drain electrode 7 of the first transistor portion 11 are united with a corresponding structure or layer in the second transistor portion 12. COPYRIGHT: (C)2011,JPO&INPIT |
