MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a work function control layer formed on the gate insulating film; a first silicide layer formed on the work function control layer; a polysilicon gate electrode formed on the first silicide layer; and a source region and a drain region formed on opposite sides of a region under the polysilicon gate electrode in the semiconductor substrate.