| 发明名称 |
In-Ga-O OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHODS THEREFOR |
| 摘要 |
Provided is an oxide sintered body, the crystal structure of which comprises indium oxide which essentially has a bixbyite structure. Gallium atoms are in solid solution with the indium oxide, and the atomic ratio Ga/(Ga+In) is between 0.10 and 0.15. |
| 申请公布号 |
WO2011086940(A1) |
申请公布日期 |
2011.07.21 |
| 申请号 |
WO2011JP00169 |
申请日期 |
2011.01.14 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD.;EBATA, KAZUAKI;TOMAI, SHIGEKAZU;YANO, KOKI |
发明人 |
EBATA, KAZUAKI;TOMAI, SHIGEKAZU;YANO, KOKI |
| 分类号 |
C04B35/00;C23C14/08;C23C14/34;H01L21/203 |
主分类号 |
C04B35/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
