发明名称 SYSTEM AND METHOD TO CONTROL A DIRECTION OF A CURRENT APPLIED TO A MAGNETIC TUNNEL JUNCTION
摘要 <p>A system and method to control a direction of a current applied to a magnetic tunnel junction (139) is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier (102). The sense amplifier is coupled to a first path (114) and to a second path (116). The first path includes a first current direction selecting transistor (118) and the second path includes a second current direction selecting transistor (120). The first path is coupled to a bit line (140) of the MTJ storage element and the second path is coupled to a source line (142) of the MTJ storage element.</p>
申请公布号 WO2011088378(A1) 申请公布日期 2011.07.21
申请号 WO2011US21380 申请日期 2011.01.14
申请人 QUALCOMM INCORPORATED;KIM, JUNG, PILL;RAO, HARI, M.;LEE, KANGHO 发明人 KIM, JUNG, PILL;RAO, HARI, M.;LEE, KANGHO
分类号 G11C11/16;H01L43/08 主分类号 G11C11/16
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