发明名称 |
METHODS AND APPARATUS FOR ATOMIC LAYER DEPOSITION ON LARGE AREA SUBSTRATES |
摘要 |
<p>A method for depositing one or more materials on a substrate comprises placing at least a portion of the substrate proximate to a plurality of deposition modules such that the substrate and each of the plurality of deposition modules define a respective one of a plurality of process spaces therebetween. Each of the plurality of process spaces is in fluidic communication with one or more of a plurality of draw gas injection chambers. Subsequently, a first precursor gas and a second precursor gas are separately injected into the plurality of process spaces while injecting a draw gas into the plurality of draw gas injection chambers, and a sweep gas is injected into the plurality of process spaces while injecting substantially no draw gas into the plurality of draw gas injection chambers.</p> |
申请公布号 |
WO2011088024(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
WO2011US20795 |
申请日期 |
2011.01.11 |
申请人 |
SUNDEW TECHNOLOGIES, LLC;SNEH, OFER |
发明人 |
SNEH, OFER |
分类号 |
C23C16/44;C23C16/455 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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