发明名称 METHODS AND APPARATUS FOR ATOMIC LAYER DEPOSITION ON LARGE AREA SUBSTRATES
摘要 <p>A method for depositing one or more materials on a substrate comprises placing at least a portion of the substrate proximate to a plurality of deposition modules such that the substrate and each of the plurality of deposition modules define a respective one of a plurality of process spaces therebetween. Each of the plurality of process spaces is in fluidic communication with one or more of a plurality of draw gas injection chambers. Subsequently, a first precursor gas and a second precursor gas are separately injected into the plurality of process spaces while injecting a draw gas into the plurality of draw gas injection chambers, and a sweep gas is injected into the plurality of process spaces while injecting substantially no draw gas into the plurality of draw gas injection chambers.</p>
申请公布号 WO2011088024(A1) 申请公布日期 2011.07.21
申请号 WO2011US20795 申请日期 2011.01.11
申请人 SUNDEW TECHNOLOGIES, LLC;SNEH, OFER 发明人 SNEH, OFER
分类号 C23C16/44;C23C16/455 主分类号 C23C16/44
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