发明名称 |
SEMICONDUCTOR FIN DEVICE AND METHOD FOR FORMING THE SAME USING HIGH TILT ANGLE IMPLANT |
摘要 |
An angled implantation process is used in implanting semiconductor fins of a semiconductor device and provides for covering some but not necessarily all of semiconductor fins of a first type with patterned photoresist, and implanting using an implant angle such that all semiconductor fins of a second type are implanted and none of the semiconductor fins of the first type, are implanted. A higher tilt or implant angle is achieved due to the reduced portions of patterned photoresist, that are used.
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申请公布号 |
US2011175165(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100689588 |
申请日期 |
2010.01.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YU SHAO-MING;CHANG CHANG-YUN |
分类号 |
H01L27/12;H01L21/20;H01L21/265;H01L27/088 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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