发明名称 |
Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode |
摘要 |
Various aspect are directed to a memory device or memory cell with a metal-oxide memory element arranged in electrical series along a current path between at least a first electrode, a metal-oxide memory element adjacent to the first electrode, and a second electrode. The first electrode comprises an electrode material having a first work function. The metal-oxide memory element comprises a metal-oxide material having a second work function. The first work function is greater than the second work function. Thermionic emission characterizes the current through this memory.
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申请公布号 |
US2011175050(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100878861 |
申请日期 |
2010.09.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHIEN WEI-CHIH;CHEN YI-CHOU |
分类号 |
H01L45/00;H01L21/16 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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