发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL ARRAY OF OPEN BIT LINE TYPE AND CONTROL METHOD THEREOF |
摘要 |
A semiconductor memory device includes: first and second bit lines of an open bit-line system; a sense amplifier that amplifies a potential difference between the first and second bit lines; a pair of first and second local data lines corresponding to the first and second bit lines, respectively; and a write amplifier circuit. The write amplifier circuit changes a potential of the second local data line without changing a potential of the first local data line at a time of writing data for the first bit line, and changes a potential of the first local data line without changing a potential of the second local data line at a time of writing data for the second bit line.
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申请公布号 |
US2011176379(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US201113008408 |
申请日期 |
2011.01.18 |
申请人 |
TAKAYAMA SHINICHI;KOTABE AKIRA;ONO KAZUO;SEKIGUCHI TOMONORI;YANAGAWA YOSHIMITSU;TAKEMURA RIICHIRO |
发明人 |
TAKAYAMA SHINICHI;KOTABE AKIRA;ONO KAZUO;SEKIGUCHI TOMONORI;YANAGAWA YOSHIMITSU;TAKEMURA RIICHIRO |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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