PHOTODIODE, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY DEVICE INCLUDING PHOTODIODE

摘要

A photodiode (7) formed in a polycrystalline silicon layer or a continuous grain silicon layer on a base substrate (5) of a display device includes a semiconductor region of a first conductivity-type (n layer (21)), an intrinsic semiconductor region (i layer (22)), and a semiconductor region of a second conductivity-type (p layer (23)) that is opposite from the first conductivity-type. At least a portion of the intrinsic semiconductor region (i layer (22)) is amorphous silicon.