发明名称 |
Photomasks having sub-lithographic features to prevent undesired wafer patterning |
摘要 |
A photomask that is used as a light filter in an exposure system is made of at least one layer of material comprising one or more transparent regions and one or more non-transparent regions. The difference between the transparent regions and the non-transparent regions defines the features that will be illuminated by the exposure system on a photoresist that will be exposed using the exposure system. The features comprise one or more device shapes and at least one sub-lithographic shape that will be exposed upon the photoresist. The sub-lithographic shape has an sub-lithographic shape size that is limited in such a way that the sub-lithographic shape causes a physical change only in a surface of the photoresist. Therefore, because the sub-lithographic shape is so small, it avoids forming an opening through the photoresist after the photoresist is developed and only causes a change on the surface of the photoresist.
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申请公布号 |
US2011177435(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100690312 |
申请日期 |
2010.01.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HERRIN RUSSELL T.;SPROGIS EDMUND J.;STAMPER ANTHONY K. |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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