发明名称 |
Method of Producing High Quality Relaxed Silicon Germanium Layers |
摘要 |
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
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申请公布号 |
US2011177681(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US201113074777 |
申请日期 |
2011.03.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FITZGERALD EUGENE A.;WESTHOFF RICHARD;CURRIE MATTHEW T.;VINEIS CHRISTOPHER J.;LANGDO THOMAS A. |
分类号 |
H01L21/20;C30B25/02;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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