METHOD FOR IMPROVED MOBILITY USING HYBRID ORIENTATION TECHNOLOGY (HOT) IN CONJUNCTION WITH SELECTIVE EPITAXY AND RELATED APPARATUS

摘要

A semiconductor apparatus includes a first substrate (102, 202) and a second substrate (106, 206) located over a first portion of the first substrate and separated from the first substrate by a buried layer (104, 204). The semiconductor apparatus also includes an epitaxial layer (108, 220) located over a second portion of the first substrate and isolated from the second substrate. The semiconductor apparatus further includes a first transistor (116) formed at least partially in the second substrate and a second transistor (128) formed at least partially in or over the epitaxial layer. The second substrate and the epitaxial layer have bulk properties with different electron and hole mobilities. At least one of the transistors is configured to receive one or more signals of at least about 5V. The first substrate could have a first crystalline orientation, and the second substrate could have a second crystalline orientation.