| 摘要 |
<p>PURPOSE: A method for forming the fine pattern of a semiconductor device is provided to easily form the fine pattern below limit resolution by forming a hard mask pattern on a cell region and a peripheral region using a hard mask layer with different etch selectivity. CONSTITUTION: First to third hard mask layers are successively formed on a semiconductor substrate(100). Third hard mask patterns are formed on a cell region(101) of the semiconductor substrate. Spacers are formed on both sides of the third hard mask patterns. Second hard mask patterns are formed on the cell region and a peripheral circuit region(105) of the semiconductor substrate. First hard mask patterns(111,115) are formed on the cell region and the peripheral circuit region.</p> |
