| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves characteristics of a selection transistor and a peripheral transistor while reducing the area of a memory cell, and whose manufacturing method is made easy. SOLUTION: A semiconductor storage device includes: a substrate 101; a cell transistor 201 including a first gate insulating film, a first floating gate, a second gate insulating film, a second floating gate, an inter-gate insulating film, and a control gate formed in this order on the substrate, the first and the second gate insulating films functioning as FN (Fowler-Nordheim) tunnel films, and the inter-gate insulating film functioning as a charge block film; and a selection or peripheral transistor 301 including a gate insulating film and a gate electrode formed in this order on the substrate, the gate insulating film and gate electrode being formed of: a first insulating film formed on the substrate; and layers formed in this order on the insulating film, and of the same materials as those of the first floating gate, the second gate insulating film, the second floating gate, the inter-gate insulating film, and the control gate. COPYRIGHT: (C)2011,JPO&INPIT
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