发明名称 Memory Program Discharge Circuit
摘要 A memory integrated circuit has an array of nonvolatile memory cells, bit lines accessing the array of nonvolatile memory cells, and bit line discharge circuitry. The bit lines have multiple discharge paths for a bit line at a same time, during a program operation.
申请公布号 US2011176378(A1) 申请公布日期 2011.07.21
申请号 US20100769502 申请日期 2010.04.28
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN CHUNG-KUANG;CHEN HAN-SUNG;HUNG CHUN-HSIUNG
分类号 G11C7/00;H01R43/00 主分类号 G11C7/00
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