发明名称 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
摘要 <p>A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.</p>
申请公布号 WO2011087144(A1) 申请公布日期 2011.07.21
申请号 WO2011JP50905 申请日期 2011.01.13
申请人 FUJIFILM CORPORATION;IWATO, KAORU;TARUTANI, SHINJI;ENOMOTO, YUICHIRO;KAMIMURA, SOU;KATO, KEITA 发明人 IWATO, KAORU;TARUTANI, SHINJI;ENOMOTO, YUICHIRO;KAMIMURA, SOU;KATO, KEITA
分类号 G03F7/038;G03F7/004;G03F7/32;H01L21/027 主分类号 G03F7/038
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