发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER |
摘要 |
A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.
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申请公布号 |
US2011177638(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100687940 |
申请日期 |
2010.01.15 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
ROMANO LINDA T.;HAN BYUNG-KWON;CRAVEN MICHAEL D. |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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