发明名称 ETCHANT COMPOSITION FOR METAL WIRING AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME
摘要 The present invention relates to an etchant for wet etching a wiring that includes copper, where the etchant includes approximately 5 to approximately 25 wt % of a peroxide, approximately 0.5 to approximately 5 wt % of an oxidant, approximately 0.1 to approximately 1 wt % of a fluoride-based compound and approximately 1 to approximately 10 wt % of a glycol. The etchant can provide an etching rate that is suitable to many processes, and produces an appropriate etching amount as well as an appropriate taper angle. In addition, the etchant exhibits advantages including relatively low viscosity as compared to phosphoric acid-based etchants, relatively uniform etching characteristics, and relative stability as compared to peroxide-based etchants.
申请公布号 US2011177680(A1) 申请公布日期 2011.07.21
申请号 US20100902018 申请日期 2010.10.11
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 LEE BYEONG-JIN;PARK HONG SIK;RHEE TAI-HYUNG;SONG YONG-SUNG;PARK CHOUNG-WOO;LEE CHANG-HO
分类号 H01L21/20;C09K13/00;C09K13/08 主分类号 H01L21/20
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