| 摘要 |
An organic EL device is provided and, in particular, a top-emission-type organic EL device, which can maintain excellent light emission efficiency over a prolonged period of time. The organic EL device includes a substrate; and an organic EL element that is formed on the substrate and that includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer. The protective layer includes at least one inorganic film provided that at least one film thereof is a SiN:H film having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of N—H bonds to Si—N bonds that is greater than 0.06 but does not exceed 0.1, and having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of Si—H bonds to Si—N bonds that is greater than 0.12 but does not exceed 0.17.
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