发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element for improving extraction efficiency of light emitted from a light emitting layer, along with a method of manufacturing the same, and to provide a semiconductor light emitting device. <P>SOLUTION: According to an embodiment, this semiconductor light emitting element includes: a semiconductor stack having a first principal surface including the light emitting layer for extracting light emitted from the light emitting layer, and a second principal surface formed on the side opposite to the first principal surface; a contact layer formed in contact with the second principal surface of the second principal surface of the semiconductor stack; a transparent electrode layer formed in contact with the contact layer on a surface on the side opposite to the second principal surface; and a reflective layer having conductivity and reflectivity and formed in contact with the transparent electrode layer on a surface on the side opposite to the contact layer. Undulation is not formed in an interface between the contact layer and the transparent electrode layer, the transparent electrode layer has undulation on a surface in contact with the reflective layer, and the reflective layer has a rough surface covering the undulation. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011142353(A) 申请公布日期 2011.07.21
申请号 JP20110092630 申请日期 2011.04.19
申请人 TOSHIBA CORP 发明人 YASUDA HIDEFUMI;KATO YUKO;IKEZAWA KAZUHIRO;TERADA TOSHIYUKI
分类号 H01L33/10 主分类号 H01L33/10
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