| 摘要 |
PROBLEM TO BE SOLVED: To provide a superjunction Schottky barrier diode including a parallel p-n layer where a first-conductivity region and a second-conductivity region are alternately arranged, the Schottky barrier diode relaxing a surface electric field and reducing a leakage current. SOLUTION: A semiconductor element includes: first and second main electrodes 5 and 6 provided on first and second main surfaces of a semiconductor substrate; a first first-conductivity region 3 forming a Schottky junction with the first main electrode; the parallel p-n layer 1 where a second first-conductivity region 1a and a second-conductivity region 1b are alternately arranged; and a first-conductivity type low-resistance layer 4 with which the second main electrode 6 comes into ohmic contact. Here, the first first-conductivity region 3 and parallel p-n layer 1 are in contact with each other, and the parallel p-n layer 1 and first-conductivity type low-resistance layer 4 are in contact with each other. A groove having an insulating film 8 formed on its inner surface is provided at least in the first first-conductivity region on the side of the first main surface. COPYRIGHT: (C)2011,JPO&INPIT |
