| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make a resistive random access memory three-dimensional by minimizing an increase in a driver region. <P>SOLUTION: The resistive random access memory includes a stacked layer structure stacked on a semiconductor substrate 11 in order of a first conductive line, a first variable resistance element, a second conductive line, a second variable resistance element, ..., an n-th conductive line, an n-th variable resistance element and an (n+1)-th conductive line (wherein n is a natural number equal to or larger than 2), and a first to n-th drivers Dr1(1) and Dr2(1) which drive the first to (n+1)-th conductive lines L1(1), L2(1), ..., L(n+1)(1). Sizes of the first to (n+1)-th drivers Dr1(1) and Dr2(1) become large gradually from the first driver to the (n+1)-th driver. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
